InAs/InAs 0.93 Sb 0.07 /InAs heterostructures were grown by metal-organic vapor-phase epitaxy in a horizontal reactor at atmospheric pressure. Based on the obtained structures, light-emitting diodes operating at λ=3.45 µm ( T =77 K) and λ=3.95 µm ( T =300 K) were fabricated. The room-temperature quantum efficiency of light-emitting diodes was 0.12%.
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Zotova et al. (2000) studied this question.
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