Heteroepitaxial InAs Grown on GaAs from Triethylindium and Arsine

Heteroepitaxial films of on substrates, grown by the decomposition of triethylindium and arsine, have been characterized. Films with mobilities of up to 10,000 cm 2 /V‐sec have been obtained. The mobility remains approximately constant with decreasing thickness up to an epitaxial layer thickness of 1 µm. A theory is presented for the variation in defect density in epitaxial layers as a function of the growth temperature and layer thickness. The carrier concentration of the layers decreases exponentially with increasing substrate temperature and decreases inversely with increasing layer thickness, in accordance with this theory.