Plasma–material interactions

Radio frequency glow discharges (plasmas) have found wide use in thin film process technology. For example, plasma‐enhanced chemical vapor deposition (PECVD) and plasma‐enhanced etching methods for pattern definition are routine techniques in the fabrication of microelectronic devices. These applications rely on energetic particle (primarily positive ion) bombardment to promote surface chemistry; the bonding structure and properties of deposited films are thereby altered, film etch rates are enhanced, and underlying films or substrates may be affected. Plasma–material interactions that control thin film deposition and etching processes are discussed. Specific examples of the role of plasma‐assisted processes in establishing the physical and chemical properties of materials in microelectronic device fabrication are presented.