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Lattice mismatched InAs1−xSbx films have been grown on (100) GaAs substrates by molecular-beam epitaxy under growth conditions far from equilibrium. The growth mechanism of the Sb related compound is found to be different from that of the As related compound. The surface morphology, the crystallinity, and the electrical properties are consistent with each other and indicate the materials to be of high quality.
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M. Y. Yen (1988) studied this question.
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