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Homoepitaxial growth of InSb using metal-organic vapor under a total gas pressure of about 10 -3 Torr has been investigated. Single crystal films with smooth surface were obtained at substrate temperatures of as low as 400°C. The conduction type and impurity density of the epitaxial layer evaluated by Metal-Oxide-Semiconductor Capacitance-Voltage (MOS C-V) method were p-type and 2×10 15 cm -3 , respectively, at 77 K.
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Sugiura et al. (1985) studied this question.
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