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n-type GaAs layers, which were heavily doped with Te above 2×10 19 cm -3 , were epitaxially grown on (100)GaAs at a substrate temperature around 550°C by plasma-assisted epitaxy. These n + -GaAs layers showed mirror faced surface and their Hall mobilities were about 900 cm 2 /Vsec. These characteristics were not changed by annealing at 550°C for 10 min. The present technology has potential use for the formation of non-alloyed ohmic contacts.
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Matsushita et al. (1983) studied this question.
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