Oxygen reactive ion etching of the planarizing photoresist layer in a three‐layer resist system is described. The vertical and lateral etch rates of the thick resist layer, as well as the degree of isotropy of the resist profile, are reported as functions of RF power and oxygen pressure. The optical emission spectra are recorded and interpreted for oxygen plasmas used in etching, revealing the presence of oxygen atoms (O) and ionized oxygen molecules . It is demonstrated that trends in the degree of isotropy which occur with changes in RF power and oxygen pressure can be predicted by monitoring the emission intensity ratio.
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Soller et al. (1984) studied this question.