Sodium and nitrogen was implanted at 20 keV and 80 keV into MOS capacitors. The influence of the implantation on sodium ion drift was studied by temperature bias treatments combined with capacitance-voltage measurements. An ion trapping effect at the electrode is observed which is strongly enhanced by 20 keV implantations and the mobile ion content can be completely depleted by repeated drift treatments. 30 keV implantations seem to stabilize the oxide with respect to sodium ion migration but cause traps which exchange carriers with the silicon. All these effects are not attributed to the implanted ions but to the radiation damage.
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Fritzsche et al. (1971) studied this question.
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