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A new preparation process for sputtered γ-Fe2O3thin film disks has been developed. The new process is composed of Fe3O4film formation by reactive sputtering and oxidation to γ-Fe2O3film. The characteristic of the process is that the Fe3O4single phase film is formed directly by reactive sputtering of an Fe-alloy target in Ar-O2atmosphere. The magnetic properties and recording results of the newly developed γ-Fe2O3thin films were almost equal to those of the reported sputtered films. Recording density D50reached 1,100 bits/mm.
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Ishii et al. (1980) studied this question.
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