Original approaches to the nanoscopic plasma process control enable us to succeed in producing individually freestanding pristine single-walled carbon nanotubes (SWNTs) on a flat-surface substrate, and creating alkali metals, halogen-elements, ferromagnetic-atoms, fullerene molecules and DNA molecules encapsulated SWNTs or double-walled carbon nanotubes (DWNTs). Investigations of their electronic and magnetic properties result in realizing the continuous transition from p-type to n-type air-stable transport property by adjusting an amount of dosed atoms or molecules inside SWNTs and DWNTs, and in forming nanostructures of ferromagnetic semiconductor, nano-p–n junctions with rectifying characteristic and nanostructures with distinct negative differential resistance.
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Hatakeyama et al. (2008) studied this question.
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