An improved method to fabricate a small lateral double tunnel junction which utilizes focused ion beam (FIB) etching and lift-off techniques is proposed. A double layer resist consisting of nitrocellulose and germanium layers was used. Narrow grooves with widths comparable to or narrower than the FIB diameter were formed in a ferromagnetic layer of Ni, and Ni/Ni-oxide/Au/Ni-oxide/Ni and Al/Al-oxide/Ni/Al-oxide/Al double junction structures were fabricated using the proposed method. The measured voltage and current characteristics of the latter structures indicated that double tunnel junctions with a barrier height of 0.61 eV were fabricated and suggest that this is a promising method to fabricate island structures for devices utilizing Coulomb blockade or spin blockade effects.
No takes yet. Share an insight, caveat, or question.
Nakayama et al. (1999) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: