Silicon splits: The application of silicon to water oxidation is limited due to unfavorable interface properties. However, these can be circumvented by using a high-performance silicon photoanode with a catalytically active iron oxide thin film (see picture). This approach results in photocurrents as high as 17 mA cm(-2) under 1 sun and zero overpotential conditions.
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Jun et al. (2011) studied this question.
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