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Measurements of the transverse magnetoresistance of n-channel MOS transistors having different amounts of oxide charges are presented. The data show that the details of the wave function perpendicular to the surface must be considered for giving a quantitative interpretation. Qualitatively the electron gas behaves as if it were two-dimensional since the longitudinal magnetoresistance is extremely small.
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K. Hess (1975) studied this question.
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