An organic scintillator has been developed for use in electron-beam lithography. The scintillator can be deposited in a thin film (<200 nm) on the substrate, and can be patterned by an ultraviolet-interferometric exposure to produce a uniformly thick, scintillating, fiducial grid. When scanned with the electron beam, the scintillating pattern produces a high-contrast (>2) optical signal. It is expected that the signal from this type of grid will improve the pattern-placement precision to within 1 nm when used in conjunction with spatial-phase-locked electron-beam lithography.
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Goodberlet et al. (1998) studied this question.
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