A photocurrent technique was used to accurately measure dose enhancement in the gate oxide of MOS devices with tungsten or titanium silicide over various thicknesses of poly-Si exposed to low-energy x-irradiation. The results show that the dose enhancement is strongly dependent on the type of metal/silicide used and the thickness of the poly-Si layer between the metal/silicide and the SiO2 gate insulator. A straightforward procedure for calculating the equal damage dose equivalence for metal/silicide over poly-Si gate MOS structures is also presented.
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Benedetto et al. (1987) studied this question.
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