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Dose-enhancement effects are monitored with standard CMOS transistors by measuring thresholdvoltage shifts due to oxide-trapped charge and interface states. These results, in conjunction with studies of the effects of trapped-hole annealing and electron-hole recombination, are used to correlate the responses of transistors irradiated with Co-60 gamma rays or 10 keV X rays.
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Fleetwood et al. (1985) studied this question.
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