Research Status and Development Trends of Laser-Assisted Simulation of Dose-Rate Effects

Pulsed-laser simulation provides a repeatable, safe, and effective complementary approach to large radiation facilities for studying transient ionizing dose-rate effects in semiconductor devices and integrated circuits. This review traces the development of laser-assisted test facilities over the past five decades and summarizes how wavelength selection, pulse-width control, beam/spot conditioning, and coordinated laser and X-ray/γ-ray platforms have expanded accessible test conditions. We discuss the physical basis of laser-radiation correspondence, from carrier generation and transport to circuit-level photocurrent phenomena, including rail-span collapse, and identify three dominant accuracy drivers: device/circuit structure and biasing, laser parameters, and temperature/thermal effects. Three conversion factor (CF) extraction approaches—carrier generation rate, peak photocurrent equivalence, and charge collection equivalence—are compared in terms of assumptions, uncertainty, and validity range. Among them, charge collection equivalence remains applicable in saturation regimes where peak-based metrics fail. Looking ahead, further progress in laser-assisted dose-rate simulation will depend on broader-band laser sources, such as UV-capable wide bandgap laser-assisted simulation systems, more reproducible CF establishment workflows, and AI-assisted electrical response modeling (e.g., technology computer aided design (TCAD) and finite-element analysis) for high-dimensional parameter studies.