The dynamic properties of a metal-oxide-semiconductor (MOS) capacitor during e-beam irradiation was simulated using numerical techniques. Poisson’s equation and the trap dynamics were used to calculate the time-dependent behavior of electrons, holes, and traps in the oxide during and after irradiation for various typical conditions. These results were used to calculate flatband shift versus gate bias voltage for steady-state as well as non-steady-state conditions. These exact computations confirm a previously published approximate two-layer model for irradiated MOS capacitors.
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Churchill et al. (1979) studied this question.
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