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May 1, 1981Journal of The Electrochemical SocietyOpen Access

The Growth of Oxidation Stacking Faults and the Point Defect Generation at Si ‐ SiO Interface during Thermal Oxidation of Silicon

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Authors

ALAnn LinUniversity of South FloridaRDR.W. DuttonHEC MontréalDAD.A. AntoniadisMassachusetts Institute of Technology

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Lin et al. (1981) studied this question.

synapsesocial.com/papers/6a86c3d02174986a53ca040bhttps://doi.org/10.1149/1.2127563
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