New technique for measuring two-dimensional oxidation-enhanced diffusion in silicon at low temperatures

In this letter, a new high-resolution technique is presented for determining the lateral extent of oxidation-enhanced diffusion (OED). A periodic grid of lines and spacings is used as an oxidation mask. It will be shown that a simple secondary ion mass spectroscopy measurement permits the extraction of parameters in the lateral direction with a resolution which can be as good as 10 nm. The lateral extent of OED is depth dependent, consistent with a physical model of point-defect recombination at the Si/SiO2 interface.