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July 3, 1997Electronics Letters

AlGaN-GaN heterostructure FETs with offset gatedesign

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RGR. GaškaSensor Electronic Technology (United States)QCQ. ChenOmega Optics (United States)JYJinwei YangLine Corporation (Japan)

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Gaška et al. (1997) studied this question.

synapsesocial.com/papers/6a86caa9efff3bac58ca01fehttps://doi.org/10.1049/el:19970818
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