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September 29, 2006Japanese Journal of Applied PhysicsOpen Access

High On/Off Ratio in Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact

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Authors

TFTakahiro FujiiNTNorio TsuyukuchiMIMotoaki IwayaMeijo University

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Fujii et al. (2006) studied this question.

synapsesocial.com/papers/6a86cab39749833e6e1543cahttps://doi.org/10.1143/jjap.45.l1048
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