Effects of partially occupied sub-bands on two-dimensional electron mobility in AlxGa1−xN/GaN heterostructures

In this article we present a study of the effect that partial occupancy of sub-bands on the two-dimensional electron mobility at different temperatures, using a fully numerical calculation in unintentionally doped AlxGa1−xN/GaN heterostructures with different Al mole fraction in the AlxGa1−xN barrier. The analysis of our results clearly indicates that the effect of partial sub-band occupancy be considerable, especially at higher temperatures and higher Al mole fractions when more than one sub-band is occupied. Comparison of our calculated results with published experimental data shows good agreement.