Answers are grounded in this paper and cite their sources.
The refinement of the evaluation formula for an equivalent oxide thickness in the case of a multi-layer gate insulator is obtained, taking into account a polarity effect in the suboxide layer at the Si/high-K dielectric interface. Calculated semiclassically and associated with the polarization dipole mechanism, the correction is negative and does not exceed 6%.
No takes yet. Share an insight, caveat, or question.
Krasnikov et al. (2011) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: