Effects of substrate temperature on GaAs tunneling diodes grown by molecular beam epitaxy

This communication discusses the effects of substrate temperatures on tunneling peak current densities both during and after growth of GaAs tunneling junctions. Molecular beam epitaxy (MBE) is the method used in this process. It also shows how thermal degradation is dependent upon doping concentrations. This degradation occurs because of high-temperature overgrowth in GaAs tunneling diodes grown by the MBE method. This communication also suggests some possible ways to minimize the thermal degradation of tunneling junctions, in order to obtain high conversion efficiency in multiple-junction solar cells.