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November 1, 1983Journal of Applied Physics

Heavy doping of GaAs and AlGaAs with silicon by molecular beam epitaxy

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MHMoty HeiblumWeizmann Institute of ScienceWWW. I. WangIBM Research - Thomas J. Watson Research CenterLOL. OsterlingIBM Research - Thomas J. Watson Research Center

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Heiblum et al. (1983) studied this question.

synapsesocial.com/papers/6a1e7e3040bc8a3dd768f8b2https://doi.org/10.1063/1.331867
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Also Consider

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  2. 2I n s i t u Ohmic-contact formation to n- and p-GaAs by molecular beam epitaxy1978 · 37 citations
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  5. 5The effect of growth conditions on Si incorporation in molecular beam epitaxial GaAs1981 · 154 citations