Fully Depleted Nanowire Field‐Effect Transistor in Inversion Mode

A different mode of transport: Intrinsic silicon nanowires grown by the vapor–liquid–solid mechanism were used to fabricate nanowire field-effect transistors (FETs). Clear current saturation is observed and the device operates in inversion mode, thereby corresponding to a fully depleted n-channel metal oxide semiconductor FET in enhancement mode (see schematic representation).