Structural Analysis of the NiSi₂/(111)Si Interface by the X-Ray Standing-Wave Method

The atomic structure of the interface between an epitaxial NiSi 2 film without a 180°-rotated twin-crystal region and an Si(111) substrate was investigated by the X-ray standing-wave method using synchrotron radiation. The angular yield of Ni K α fluorescent X-rays was measured around the Bragg angle of both 111 and 111̄ reflections of the Si substrate. By fitting the profile of the experimental yield curves with that of the calculated ones, the atomic structure of the interface was determined and the lattice distortion of NiSi 2 films investigated.