The intensity variations in the Compton and thermal scatterings with the change in diffraction condition were measured using a double crystal spectrometer of parallel setting for Si and Ge single crystals with Cu Kαand Mo Kα radiations. For comparison, the fluorescent emission was also measured for Ge with Mo Kα. A large dip was observed in the intensity cures of the Compton and thermal scatterings for all the cases, like in the fluorescent scattering observed by Batterman. The asymmetric profile of the intensity curve varies with the specimen, radiation and reflecting plane used. The various asymmetric profiles are explained qualitatively by the difference in mechanism of the scattering, i.e. by taking into consideration that the Compton scattering is caused mainly by the outer electrons, the thermal scattering by the whole electrons and the fluorescent emission by the inner electrons.
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Annaka et al. (1966) studied this question.
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