Dot Structures Fabricated by Laser Etching -Laser Wavelength Dependence of Dot Structures Fabricated by Laser Etching-

Submicron periodic dot structures on semiconductor substrates (n-InP, n-GaAs) were fabricated directly with the one-step laser-photochemical dry etching of n-InP and n-GaAs using a holographic exposure system. We employed a new etching technique which makes use of laser-induced surface electromagnetic waves (SEW) in the etching gas/semiconductor interface. The size of dot structures on n-InP was about 105 nm for the frequency-tripled Nd:YAG laser and 80 nm for the frequency-quadrupled Nd:YAG laser. Thus, the size of dot structures depended upon the incident laser wavelength.