We present the first experimental investigation of ultrafast optical switching in a three-dimensional photonic crystal made of a Si-opal composite. Ultrafast (30 fs) changes in reflectivity around the photonic stop band up to 1% were measured for moderate pump power (70 microJ/cm(2)). Short-lived photoexcited carriers in silicon induce changes in the dielectric constant of Si and diminish the constructive interference inside the photonic crystal. The results are analyzed within a model based on a two-band mixing formalism.
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Mazurenko et al. (2003) studied this question.
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