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We report light-beam self-trapping triggered by the pyroelectric effect in an isolated ferroelectric thin film. Experiments are performed in an 8-μm-thick congruent undoped LiNbO(3) film bonded onto a silicon wafer. Response time two orders of magnitude faster than in bulk LiNbO(3) is reported. The original underlying physics specific of this arrangement is discussed.
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Chauvet et al. (2015) studied this question.
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