Raman intensity enhancement of the Si peak by CdS thin films

A method, which utilizes interference enhanced Raman scattering and resonant Raman scattering techniques, is used to overcome the low efficiency of Raman methods to diagnose highly reflective materials. As applied to the p-type Si wafer, the enhanced gain is up to nearly a factor of 80 at 4880 Å excitation. Because of the strong absorption of the scattered light, it is recommended that the suitable deposited thickness of CdS films should not be thicker than 700 Å.