Characterization of HfO[sub 2] and HfO[sub x]N[sub y] Gate Dielectrics Grown by PE Metallorganic CVD with a TaN Gate Electrode

films were prepared using hafnium tertiary-butoxide in a plasma and ambient to improve the thermal stability of hafnium-based gate dielectrics. The incorporation of 10% nitrogen into films resulted in a smooth surface morphology and a crystallization temperature as high as 200°C compared with pure films. capacitors showed stable capacitance-voltage characteristics even at a postmetal annealing (PMA) temperature of 1000°C in a ambient and a constant value of 1.6 nm equivalent oxide thickness irrespective of an increase in the postdeposition annealing (PDA) and PMA temperatures. The leakage current densities of capacitors annealed at PDA and PMA temperatures of 800 and 900°C, respectively, were approximately one order of magnitude lower than that of capacitors.