Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
October 15, 1987Journal of Applied Physics

Silicon-silicon dioxide interface: An infrared study

View Full Paper
Ask AI
Bookmark
Share

Authors

IBIan W. BoydBrunel University of LondonJWJohn I. B. WilsonHeriot-Watt University

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Boyd et al. (1987) studied this question.

synapsesocial.com/papers/6a8714e248ef9afcd2a25dachttps://doi.org/10.1063/1.339320
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Dry oxidation of silicon: A new model of growth including relaxation of stress by viscous flow1983 · 105 citations
  2. 2SIMPLE TECHNIQUE FOR VERY THIN SiO2 FILM THICKNESS MEASUREMENTS1967 · 16 citations
  3. 3Si-SiO2 interface structures on Si(100), (111), and (110) surfaces1983 · 92 citations
  4. 4SiO compound formation by oxygen ion implantation into silicon1985 · 24 citations
  5. 5Structure of ultrathin silicon dioxide films1987 · 46 citations