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We report a new and effective method to prepare high activity graphitic carbon nitride (g-C3N4) by a simple ammonia etching treatment. The obtained g-C3N4 displays a high BET surface area and enhanced electron/hole separation efficiency. The hydrogen evolution rates improved from 52 μmol h(-1) to 316.7 μmol h(-1) under visible light.
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Yang et al. (2015) studied this question.
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