The temperature dependence of the electrical resistivity and the Hall coefficient was measured for homogeneous AlxGa1–xAs bulk single crystals with x > 0.8. Impurity concentrations and effective masses were determined from an analysis of the conduction band electron concentration. The mobility was analysed taking into account the features of the band structure and the lattice vibration spectrum of AlxGa1–xAs. Impurity band conduction was observed in some crystals at low temperatures.
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Neumann et al. (1973) studied this question.