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January 1, 1968Journal of The Electrochemical Society

Semiconductor Doping by High Energy 1–2.5 Mev Ion Implantation

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Authors

SRS. RoosildUnited States Air Force Research LaboratoryRDR. DolanWayne State UniversityBBB. BuchananHewlett-Packard (United States)

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Roosild et al. (1968) studied this question.

synapsesocial.com/papers/6a8730699749833e6e15530dhttps://doi.org/10.1149/1.2411148
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