This article presents a novel III-V on silicon laser. This work exploits the phenomenon that a passive silicon cavity, side-coupled to a III-V waveguide, will provide high and narrow-band reflectivity into the III-V waveguide: the resonant mirror. This results in an electrically pumped laser with a threshold current of 4 mA and a side-mode suppression ratio up to 48 dB.
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Koninck et al. (2015) studied this question.
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