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InGaAsP (λ = 1.5 μm) crescent geometry lasers grown in etched V grooves are characterised. The active layer is surrounded by asymmetric InGaAsP (λ = 1.3 μm) cladding layers which provide separate optical confinement. The lasers have 25–30 mA thresholds and external quantum efficiencies of 0.5–0.6 at 300 K. Fundamental mode operation is obtained up to 15 mW/facet at room temperature.
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Ziel et al. (1983) studied this question.
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