Design Considerations of GaInNAs-GaAs Quantum Wells: Effects of Indium and Nitrogen Mole Fractions

The influences of In and N compositions on the optical gain characteristics of a GaInNAs-GaAs single quantum well are studied theoretically for the first time. When compared with GaInAs, GaInNAs shows a higher optical gain and a longer emission wavelength, under the condition of identical strain. For a given operating wavelength, the higher-In GaInNAs quantum well exhibits a larger optical gain and a smaller carrier leakage than the higher-N GaInNAs quantum well. For example, more than a two-fold improvement in threshold current is expected from the higher-In Ga 0.6 In 0.4 N 0.01 As 0.99 quantum well laser than the higher-N Ga 0.75 In 0.25 N 0.02 As 0.98 quantum well laser operating at 1.3 µm.