Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and As₄

The growth of undoped GaAs layers using molecular beams of triethylgallium (TEG) and elemental arsenic (As 4 ) was studied. All epilayers showed a p -type conductivity caused by carbon as the main residual acceptor. The carrier concentration decreased as the As 4 -to-TEG pressure ratio was increased, resulting in the lowest value of p =3×10 14 cm -3 at an As 4 -to-TEG pressure ratio of 67. A mass spectrometric analysis during growth revealed the formation of ethylarsine compounds.