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February 1, 1983Journal of Applied Physics

Electrical and optical properties of Be-doped InP grown by molecular beam epitaxy

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Authors

YKYuichi KawamuraOsaka Prefecture UniversityHAH. AsahiThe University of OsakaHNHaruo NagaiPanasonic (Japan)

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Kawamura et al. (1983) studied this question.

synapsesocial.com/papers/6a879c587ab97dc37e261c56https://doi.org/10.1063/1.332045
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  4. 4Properties of Molecular Beam Epitaxial InxGa1-xAs (x≈0.53) Layers Grown on InP Substrates1979 · 20 citations
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