What question did this study set out to answer?

Investigate the molecular-beam epitaxial growth conditions of InP homoepitaxial layers and evaluate their electrical, optical, and defect properties.

April 1, 1981Journal of Applied Physics

Molecular-beam epitaxial growth of InP homoepitaxial layers and their electrical and optical properties

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Authors

HAH. AsahiThe University of Osaka YKYuichi KawamuraOsaka Prefecture University MIM. IkedaNTT (Japan)

Discussion

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Implication

Experimental study demonstrates high-quality InP homoepitaxial growth using molecular-beam epitaxy at 450 °C, indicating smooth surface morphology and low defect emission for optical applications.

Key Points

Investigate the molecular-beam epitaxial growth conditions of InP homoepitaxial layers and evaluate their electrical, optical, and defect properties.
Grew InP homoepitaxial layers on (100) InP substrates via molecular-beam epitaxy at a substrate temperature of 450 °C with a 124P+4/115In+ beam intensity ratio.
Evaluated electrical and optical properties through room-temperature mobility measurements, photoluminescence (PL), PL topography, and deep-level transient spectroscopy (DLTS).
Achieved mirror-smooth undoped n-type epilayers with a carrier concentration of 1–3×10^16 cm^-3 and an electron mobility of 3000 cm^2/V·s at room temperature.
Demonstrated photoluminescent intensity comparable to bulk and liquid-phase epitaxial InP, lower deep-level emission intensity, and featureless PL topographs.
Identified three distinct electron trap levels using deep-level transient spectroscopy, whereas hole trap centers were undetectable.

Cite This Study

Asahi et al. (1981) studied this question.

synapsesocial.com/papers/6a6fbde8e36a167817e175aa https://doi.org/10.1063/1.329017

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April 1, 1981Journal of Applied Physics

Molecular-beam epitaxial growth of InP homoepitaxial layers and their electrical and optical properties

View Full Paper

Ask AI

Bookmark

Authors

HAH. AsahiThe University of Osaka YKYuichi KawamuraOsaka Prefecture University MIM. IkedaNTT (Japan)

Discussion

Member takes

Implication

Experimental study demonstrates high-quality InP homoepitaxial growth using molecular-beam epitaxy at 450 °C, indicating smooth surface morphology and low defect emission for optical applications.

Key Points

Investigate the molecular-beam epitaxial growth conditions of InP homoepitaxial layers and evaluate their electrical, optical, and defect properties.
Grew InP homoepitaxial layers on (100) InP substrates via molecular-beam epitaxy at a substrate temperature of 450 °C with a 124P+4/115In+ beam intensity ratio.
Evaluated electrical and optical properties through room-temperature mobility measurements, photoluminescence (PL), PL topography, and deep-level transient spectroscopy (DLTS).
Achieved mirror-smooth undoped n-type epilayers with a carrier concentration of 1–3×10^16 cm^-3 and an electron mobility of 3000 cm^2/V·s at room temperature.
Demonstrated photoluminescent intensity comparable to bulk and liquid-phase epitaxial InP, lower deep-level emission intensity, and featureless PL topographs.
Identified three distinct electron trap levels using deep-level transient spectroscopy, whereas hole trap centers were undetectable.

Cite This Study

Asahi et al. (1981) studied this question.

synapsesocial.com/papers/6a6fbde8e36a167817e175aa https://doi.org/10.1063/1.329017

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