Buried heterostructure laser fabricated using three-step gas source molecular beam epitaxy

Buried heterostructure lasers fabricated using a three-step gas source molecular beam epitaxy (GSMBE) process are presented for the first time. We propose a new structure design compatible with nonselective regrowth for the blocking layers, therefore avoiding the use of a dielectric mask. The structure is terminated by a second overgrowth after a material lift-off. Preliminary results show cw operation with threshold currents of 60 mA for 800-μm-long devices and maximum output power up to 27 mW per facet.