60 mW Pulsed and Continuous Wave Operation of GaN-Based Semipolar Green Laser with Characteristic Temperature of 190 K

We studied characteristic temperatures ( T 0 ) of laser diodes (LDs) grown on semipolar GaN substrates and emitting in the green spectral range. For several semipolar laser designs with and without an electron blocking layer (EBL), T 0 remains higher (161–246 K) than that typically reported for c -plane green LDs. The slope efficiency measured in the pulsed regime is nearly temperature independent. These observations indicate that T 0 is mainly determined by intrinsic quantum well (QW) properties, such as higher differential gain. A high T 0 and a sufficient injection efficiency allow the achievement of a continuous wave output power of 60 mW for an LD without an EBL.