Heteroepitaxial Growth of GaP on a Si (100) Substrate by Molecular Beam Epitaxy

Heteroepitaxial films of GaP were grown on Si (100) substrates by molecular beam epitaxy (MBE). The GaP films were single crystalline in the growth temperature range from 300°C to 590°C. These films had a tendency to have flat surfaces at lower growth temperatures. Sn was doped as n-type dopant of GaP films in the carrier concentration range from 3×10 16 cm -3 to 8×10 18 cm -3 . The n-GaP/p-Si heterojunction showed rectifying properties. Hall mobilities of the n-GaP films at room temperature were 100–30 cm 2 V -1 s -1 for the carrier concentration range from 3×10 16 cm -3 to 8×10 18 cm -3 .