Vapor phase epitaxial growth of InP was carried out using triethylindium and PH 3 on semi-insulating InP substrate. Triethylindium and PH 3 were mixed after they were introduced to the reactor, which reduced the formation of an intermediate compond and resulted in successful growth of high quality InP films under normal pressure. The growth rate was as high as 4∼5 µm per hour. The best mobility obtained was 36300 cm 2 /V·s at 77 K. The photoluminescence intensities are comparable to those of LPE and LEC crystals of equivalent doping level.
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Fukui et al. (1980) studied this question.
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