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December 15, 1978Physical review. B, Condensed matter

Isoelectronic impurity states in direct-gap III-V compounds: The case of InP: Bi

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WRW. W. RühlePhilipps University of MarburgWSW. SchmidHeinz Maier-Leibnitz ZentrumRMR. Meck

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Rühle et al. (1978) studied this question.

synapsesocial.com/papers/6a879ccd9d2f35cde6541db4https://doi.org/10.1103/physrevb.18.7022
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Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1The Zeeman effect in the spectrum of excitons bound to isoelectronic bismuth in indium phosphide1974 · 32 citations
  2. 2Liquid Phase Epitaxy of InP1974 · 70 citations
  3. 3Cubic contributions to the spherical model of shallow acceptor states1974 · 392 citations
  4. 4Interimpurity Recombinations Involving the Isoelectronic Trap Bismuth in Gallium Phosphide1969 · 103 citations