The origin of microtwinning in room temperature indented GaAs crystals is analyzed. It is shown that microtwinning does not take place because of the non-centrosymmetry of the crystal structure but because the friction forces acting on the 30° partial dislocations are higher than those acting on the 90° partial dislocations: R30(β) > R30(α) > R90 (α or β).
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Lefebvre et al. (1988) studied this question.
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